G N E P I - définition. Qu'est-ce que G N E P I
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  1. Dictionnaires
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  3. G N E P I

Qu'est-ce (qui) est G N E P I - définition

A DIODE WITH A WIDE, UNDOPED INTRINSIC SEMICONDUCTOR REGION BETWEEN A P-TYPE SEMICONDUCTOR AND AN N-TYPE SEMICONDUCTOR REGION
P-i-n diode; Pin diode; P-i-n and n-i-p; P-i-n; N-i-p; PIN photodiode; P-I-N; P-i-n junction
  • An RF microwave PIN diode attenuator
  • A PIN diode RF microwave switch

M/E/A/N/I/N/G         
  • Cover of ''M/E/A/N/I/N/G''
MAGAZINE
M/E/A/N/I/N/G : Contemporary Art Issues; M/E/A/N/I/N/G: Contemporary Art Issues
M/E/A/N/I/N/G was an art publication for dissenting viewpoints. Founded in 1986 by Susan Bee and Mira Schor as a magazine for and by artists, it was first published in New York in December, 1986.
https://en.wikipedia.org/wiki/M/E/A/N/I/N/G
P–n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there.
https://en.wikipedia.org/wiki/P–n_junction
p-n junction         
  • A silicon p–n junction in reverse bias.
  • PN junction operation in forward-bias mode, showing reducing depletion width.
  • '''Figure B.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Under the junction, plots for the charge density, the electric field, and the voltage are reported. (The log concentration curves should actually be smoother, like the voltage.)
  • '''Figure A.''' A p–n junction in thermal equilibrium with zero-bias voltage applied. Electron and hole concentration are reported with blue and red lines, respectively. Gray regions are charge-neutral. Light-red zone is positively charged. Light-blue zone is negatively charged. The electric field is shown on the bottom, the electrostatic force on electrons and holes and the direction in which the diffusion tends to move electrons and holes. (The log concentration curves should actually be smoother with slope varying with field strength.)
  • [[Silicon]] atoms (Si) enlarged about 45,000,000x.
SEMICONDUCTOR–SEMICONDUCTOR JUNCTION, FORMED AT THE BOUNDARY BETWEEN A P-TYPE AND N-TYPE SEMICONDUCTOR
P-N junction; Reverse bias; Reverse-biased; Idiot Diode; P–N junction; PN junction; Pn junction; Pn-junction; Single-junction cell; P-n; Semiconductor junction; Pn Junction; Formation of a p-n Junction; P-n junction
¦ noun Electronics a boundary between p-type and n-type material in a semiconductor device, functioning as a rectifier.

Wikipédia

PIN diode

A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts.

The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.

The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.

https://en.wikipedia.org/wiki/PIN diode
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